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this is information on a product in full production. november 2012 doc id 13477 rev 9 1/17 17 rhf43b rad-hard, precision, bipolar, single-operational amplifier datasheet ? production data features high radiation immunity: 300 krad tid at high/low dose rate (eldrs-free), tested immunity of sel /seu at 125 c under 120 mev/mg/cm2 let ions, 14 v supply rail-to-rail output 8 mhz gain bandwidth at 16 v low input offset voltage: 100 v typ supply current: 2.2 ma typ operating from 3 to 16 v input bias current: 30 na typ esd internal protection 2 kv latch-up immunity: 200 ma qmlv qualified, eldrs-free applications space probes and satellites defense systems scientific instrumentation nuclear systems description the rhf43b is a precision, bipolar operational amplifier available in a ceramic 8-pin flat package and in die form. in addition to its low offset voltage, rail-to-rail feature and wide supply voltage, the rhf43b is designed for increased tolerance to radiation. its intrinsic eldrs-free rad-hard design allows this product to be used in space applications and in applications operating in harsh environments. note: contact your st sales office for information on the specific conditions for products in die form. the upper metallic lid is not electrically c onnected to any pins, nor to the ic die inside the package. ceramic flat-8 table 1. device summary reference smd pin quality level package lead finish mass eppl (1) temp. range rhf43bk1 - engineering model flat-8 gold 0.50g - -55 c to 125 c RHF43BK-01V 5962f062371vxc qml-v model ye s 1. eppl = esa preferred part list www.st.com
contents rhf43b 2/17 doc id 13477 rev 9 contents 1 absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 achieving good stability at low gains . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.1 ceramic flat-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
rhf43b absolute maximum ratings and operating conditions doc id 13477 rev 9 3/17 1 absolute maximum ratings and operating conditions table 2. absolute maximum ratings (amr) symbol parameter value unit v cc supply voltage (1) 1. the supply voltage is defined as the diffe rence between the voltages applied on the v cc and v dd pins. 18 v v id differential input voltage (2) 2. differential voltages are the non-inverting input termi nal with respect to the inverting input terminal. 1.2 v v in input voltage range (3) 3. the magnitude of input and output terminal must never exceed v cc + 0.3 v. v dd -0.3 to 16 v i in input current 45 ma t stg storage temperature -65 to +150 c r thja thermal resistance junction to ambient (4)(5) 4. short-circuits can c ause excessive heating and destructive dissipation. 5. r th are typical values. 125 c/w r thjc thermal resistance junction to case (4)(5) 40 c/w t j maximum junction temperature 150 c esd hbm: human body model (6) 6. human body model: 100 pf discharged through a 1.5 k resistor between two pins of the device, done for all couples of pin combinations with other pins floating. 2kv latch-up immunity 200 ma lead temperature (soldering, 10 sec) 260 c radiation related parameters dose low dose rate of 0.01 rad.sec -1 (up to vcc = 16 v) 300 krad high dose rate of 50-300 rad.sec -1 (up to vcc = 16 v) 300 krad hi heavy ion latch-up (sel) immune with heavy ions (up to vcc = 14 v) 120 mev.cm 2 /mg table 3. operating conditions symbol parameter value unit v cc supply voltage 3 to 16 v v icm common mode input voltage range v dd to v cc v t oper operating free air temperature range -55 to +125 c
electrical characteristics rhf43b 4/17 doc id 13477 rev 9 2 electrical characteristics table 4. 16 v supply: v cc = +16 v, v dd = 0 v, load to v cc /2 (unless otherwise specified) symbol parameter test conditions ambient temp. min. typ. max. unit dc performance i cc supply current no load +125c 2.9 ma +25c 2.5 2.9 -55c 2.9 v io offset voltage v icm = v cc /2 +125c -500 500 v +25c -300 100 300 -55c -500 500 dv io input offset voltage drift - 1 v/c i ib input bias current v icm = v cc /2 +125c -100 100 na +25c -60 30 60 -55c -100 100 di ib input offset current tempera - ture drift v icm = v cc /2 - 100 pa/c i io input offset current v icm = v cc /2 +125c -35 35 na +25c -15 1 15 -55c -35 35 r in differential input resistance between in+ and in- +25c 0.16 m input resistance between in+ (or in-) and gnd +25c 2000 c in differential input capacitance between in+ and in- +25c 8 pf input capacitance between in+ (or in-) and gnd +25c 2 cmr common mode rejection ratio 0 < v icm < 16 v +125c 72 db +25c 72 110 -55c 72 svr supply rejection ratio 3 v < v cc <16 v v icm = v cc /2 +125c 80 db +25c 90 120 -55c 80 a vd large signal voltage gain v out = 0.5 v to 15.5 v r l = 1 k 0 < v icm < 16 v +125c 60 db +25c 74 85 -55c 60
rhf43b electrical characteristics doc id 13477 rev 9 5/17 v oh high level output voltage r l = 1 k +125c 15.6 v +25c 15.7 15.8 -55c 15.6 r l = 10 k +125c 15.8 +25c 15.9 15.96 -55c 15.8 v ol low level output voltage r l = 1 k +125c 0.3 v +25c 0.1 0.2 -55c 0.3 r l = 10 k +125c 0.1 +25c 0.04 0.06 -55c 0.1 i out output sink current v out = v cc +125c 15 ma +25c 20 30 -55c 15 output source current v out = v cc +125c 10 +25c 15 25 -55c 10 ac performance gbp gain bandwidth product f = 100 khz r l = 1 k , c l = 100 pf +125c 3.5 mhz +25c 6 8 -55c 3.5 f u unity gain frequency r l = 1 k , c l = 100 pf +25c 5 mhz m phase margin gain = +5 r l = 1 k , c l = 100 pf +25c 50 degrees sr slew rate r l = 1 k , c l = 100 pf +125c 1.7 v/ s +25c 2 3 -55c 1.7 e n equivalent input noise voltage f = 1 khz +25c 7.5 i n equivalent input noise current f = 1 khz +25c 1 thd+e n total harmonic distortion v out = (v cc -1 v)/5 gain = -5.1 v icm = v cc /2 +25c 0.01 % table 4. 16 v supply: v cc = +16 v, v dd = 0 v, load to v cc /2 (unless otherwise specified) (continued) symbol parameter test conditions ambient temp. min. typ. max. unit nv hz ----------- - pa hz ----------- -
electrical characteristics rhf43b 6/17 doc id 13477 rev 9 table 5. 3 v supply: v cc = + 3 v, v dd = 0, load to v cc /2 (unless otherwise specified) symbol parameter test conditions ambient temp. min. typ. max. unit dc performance i cc supply current no load +125c 2.6 ma +25c 2.2 2.6 -55c 2.6 v io offset voltage +125c -500 500 v +25c -300 100 300 -55c -500 500 dv io input offset voltage drift - 1 v/c i ib input bias current v cc = +4 v v icm = v cc /2 +125c -100 100 na +25c -60 30 60 -55c -100 100 di ib input offset current tempera - ture drift v cc = +4 v v icm = v cc /2 -100pa/c i io input offset current v cc = +4 v v icm = v cc /2 +125c -35 35 na +25c -15 1 15 -55c -35 35 r in differential input resistance between in+ and in- +25c 0.16 m input resistance between in+ (or in-) and gnd +25c 2000 c in differential input capacitance between in+ and in- +25c 8 pf input capacitance between in+ (or in-) and gnd +25c 2 cmr common mode rejection ratio 0 < v icm < 3 v +125c 72 db +25c 72 90 -55c 72 a vd large signal voltage gain v out = 0.5 v to 2.5 v r l = 1 k 0 < v icm < 3 v +125c 60 db +25c 74 85 -55c 60
rhf43b electrical characteristics doc id 13477 rev 9 7/17 v oh high level output voltage r l = 1 k +125c 2.8 v +25c 2.9 2.95 -55c 2.8 r l = 10 k +125c 2.9 +25c 2.94 2.98 -55c 2.9 v ol low level output voltage r l = 1 k +125c 0.2 v +25c 0.05 0.1 -55c 0.2 r l = 10 k +125c 0.1 +25c 0.02 0.06 -55c 0.1 i out output sink current v out = v cc +125c 15 ma +25c 20 30 -55c 15 output source current v out = v cc +125c 10 +25c 15 25 -55c 10 ac performance gbp gain bandwidth product f = 100 khz r l = 1 k , c l = 100 pf +125c 3.5 mhz +25c 6 7.5 -55c 3.5 f u unity gain frequency r l = 1 k , c l = 100 pf +25c 5 mhz m phase margin gain = +5 r l = 1 k , c l = 100 pf +25c 50 degrees sr slew rate r l = 1 k , c l = 100 pf +125c 1.7 v/ s +25c 2 2.7 -55c 1.7 e n equivalent input noise voltage f = 1 khz +25c 7 i n equivalent input noise current f = 1 khz +25c 0.8 thd+e n total harmonic distortion v out = (v cc -1 v)/5 gain = -5.1 v icm = v cc /2 +25c 0.01 % table 5. 3 v supply: v cc = + 3 v, v dd = 0, load to v cc /2 (unless otherwise specified) (continued) symbol parameter test conditions ambient temp. min. typ. max. unit nv hz ----------- - pa hz ----------- -
electrical characteristics rhf43b 8/17 doc id 13477 rev 9 figure 1. input offset voltage distribution figure 2. input bias current vs. supply voltage figure 3. input bias current vs. vicm at v cc = 3 v figure 4. input bias current vs. vicm at v cc = 4 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ? 2.0 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 vcc = 4v t= +125c t= +25c t= ? 55c input bias current ( a) input common mode voltage (v) figure 5. input bias current vs. vicm at v cc = 16 v figure 6. gain bandwidth product vs. vicm at v cc = 10 v 0246810121416 ? 2.0 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 vcc = 16v t= +125c t= +25c t= ? 55c input bias current ( a) input common mode voltage (v)
rhf43b electrical characteristics doc id 13477 rev 9 9/17 figure 7. supply current vs. vicm in follower configuration at v cc = 3 v figure 8. supply current vs. vicm in follower configuration at v cc = 16 v figure 9. supply current vs. supply voltage at v icm = v cc /2 figure 10. output current vs. supply voltage at v icm = v cc /2 figure 11. output current vs. output voltage at v cc = 3 v figure 12. output current vs. output voltage at v cc = 16 v
electrical characteristics rhf43b 10/17 doc id 13477 rev 9 figure 13. differential input voltage vs. output voltage at v cc = 3 v figure 14. differential input voltage vs. output voltage at v cc = 16 v figure 15. noise vs. vicm at v cc = 10 v figure 16. noise vs. frequency at v cc = 3 v and v cc = 16 v vcc=16v, vicm=2.5v, tamb=25c vcc=3v, vicm=2.5 v, tamb=25c input equivalent noise density (nv/vhz) figure 17. voltage gain and phase vs. frequency at v icm = 1.5 v and v cc = 3 v figure 18. voltage gain and phase vs. frequency at v icm = 2.5 v and v cc = 3 v 10 4 10 5 10 6 10 7 ?5 0 ?4 0 ?4 0 ?3 0 ?2 0 ?2 0 ?1 0 0 0 10 20 20 30 40 40 50 ?180 ?150 ?150 ?120 ?120 ?9 0 ?9 0 ?6 0 ?6 0 ?3 0 ?3 0 0 30 30 60 60 90 90 120 120 150 150 180 vcc=3v, vicm=1.5v, g= ?100 rl=1kohms, cl=100pf, vrl=vcc/2 tamb=25c gain (db) phase () 10 4 10 5 10 6 10 7 ?5 0 ?4 0 ?4 0 ?3 0 ?2 0 ?2 0 ?1 0 0 0 10 20 20 30 40 40 50 ?1 8 0 ?1 5 0 ?1 5 0 ?1 2 0 ?1 2 0 ?9 0 ?9 0 ?6 0 ?6 0 ?3 0 ?3 0 0 30 30 60 60 90 90 120 120 150 150 180 vcc=3v, vicm=2.5v, g= ?100 rl=1kohms, cl=100pf, vrl=vcc/2 tamb=25c gain (db) phase ()
rhf43b electrical characteristics doc id 13477 rev 9 11/17 figure 19. voltage gain and phase vs. frequency at v icm = 0.5 v and v cc = 3 v figure 20. voltage gain and phase vs. frequency at v icm = 8 v and v cc = 16 v 10 4 10 5 10 6 10 7 ?5 0 ?4 0 ?4 0 ?3 0 ?2 0 ?2 0 ?1 0 0 0 10 20 20 30 40 40 50 ?180 ?150 ?150 ?120 ?120 ?9 0 ?9 0 ?6 0 ?6 0 ?3 0 ?3 0 0 30 30 60 60 90 90 120 120 150 150 180 vcc=3v, vicm=0.5v, g= ?100 rl=1kohms, cl=100pf, vrl=vcc/2 tamb=25c gain (db) phase () 10 4 10 5 10 6 10 7 ?5 0 ?4 0 ?4 0 ?3 0 ?2 0 ?2 0 ?1 0 0 0 10 20 20 30 40 40 50 ?1 8 0 ?1 5 0 ?1 5 0 ?1 2 0 ?1 2 0 ?9 0 ?9 0 ?6 0 ?6 0 ?3 0 ?3 0 0 30 30 60 60 90 90 120 120 150 150 180 vcc=16v, vicm=0.5v, g= ?100 rl=1kohms, cl=100pf, vrl=vcc/2 tamb=25c gain (db) phase () figure 21. voltage gain and phase vs. frequency at v icm = 15.5 v and v cc = 16 v figure 22. voltage gain and phase vs. frequency at v icm = 0.5 v and v cc = 16 v 10 4 10 5 10 6 10 7 ?5 0 ?4 0 ?4 0 ?3 0 ?2 0 ?2 0 ?1 0 0 0 10 20 20 30 40 40 50 ?180 ?150 ?150 ?120 ?120 ?9 0 ?9 0 ?6 0 ?6 0 ?3 0 ?3 0 0 30 30 60 60 90 90 120 120 150 150 180 vcc=16v, vicm=15.5v, g= ?100 rl=1kohms, cl=100pf, vrl=vcc/2 tamb=25c gain (db) phase () 10 4 10 5 10 6 10 7 ?5 0 ?4 0 ?4 0 ?3 0 ?2 0 ?2 0 ?1 0 0 0 10 20 20 30 40 40 50 ?1 8 0 ?1 5 0 ?1 5 0 ?1 2 0 ?1 2 0 ?9 0 ?9 0 ?6 0 ?6 0 ?3 0 ?3 0 0 30 30 60 60 90 90 120 120 150 150 180 vcc=16v, vicm=0.5v, g= ?100 rl=1kohms, cl=100pf, vrl=vcc/2 tamb=25c gain (db) phase () figure 23. inverting large signal pulse response at v cc = 3 v, +25c figure 24. inverting large signal pulse response at v cc = 16 v, +25c -0.5 0.0 0.00.51.01.52.0 2.0 2.5 3.0 3.5 4.0 4.0 4.5 -2.0 -2.0 -1.5 -1.5 -1.0 -1.0 -0.5 -0.5 0.0 0.0 0.5 0.5 1.0 1.0 1.5 1.5 2.0 2.0 vcc=3v, vin=1vpp g=-100 output voltage (v)) -1.0 -1.0 0.0 1.0 1.0 2.0 3.0 3.0 4.0 5.0 5.0 6.0 7.0 7.0 8.0 9.0 9.0 -8 -8 -6 -6 -4 -4 -2 -2 0 0 2 2 4 4 6 6 8 8 vcc=16v, vin=1vpp, g= -100 output voltage (v))
achieving good stability at low gains rhf43b 12/17 doc id 13477 rev 9 3 achieving good stability at low gains at low frequencies, the rhf43b can be used in a low gain configuration as shown in figure 25 . at lower frequencies, the stability is not affected by the value of the gain, which can be set close to 1 v/v (0 db), and is reduced to its simplest expression g1 = 1+rfb/rg. therefore, an r-c cell is added in the gain network so that the gain is increased (up to 5) at higher frequencies (where the stability of the amp lifier could be affected). at higher frequencies, the gain becomes g2=1+rfb/(rg//r). rg becomes a complex impedance. the closed-loop gain features a variation in frequency and can be expressed as: where a pole appears at 1/2 rc and a zero at g1/2 (g1r+rfb)c. the frequency can be plotted as shown in figure 26 . figure 25. low gain configuration figure 26. closed-loop gain rg v cc rf b = 2 k r l 1 k vdd c l = 100 pf vin vo u t c r + - am06122 log fre qu ency g a in (db) +20 db/dec - 20 db/dec g2=1+rf b /(rg//r) g1=1+rf b //rg 0 db b a ndwidth of the op- a mp a t g2 g a in ba ndwidth prod u ct g1 2 (g1r+rf b )c 1 2 rc a vd fre qu encie s where the op- a mp c a n b e us ed am0612 3 table 6. external components versus low-frequency gain g1 (v/v) r ( )c (nf)rg ( )rfb ( ) 1.1 510 1 20k 2k 251012k2k 351011k2k 4 510 1 750 2.4k 5 not connected not connected 820 3.3k gain g1 1jc g1r rfb + g1 ---------------------------- - ?? ?? + 1 jcr + ------------------------------------------------------------- =
rhf43b package information doc id 13477 rev 9 13/17 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information rhf43b 14/17 doc id 13477 rev 9 4.1 ceramic flat-8 package information figure 27. ceramic flat-8 package mechanical drawing note: the upper metallic lid is not electrically connected to any pins, nor to the ic die inside the package. connecting unused pins or metal lid to ground or to the power supply will not affect the electrical characteristics. table 7. ceramic flat-8 package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.24 2.44 2.64 0.088 0.096 0.104 b 0.38 0.43 0.48 0.015 0.017 0.019 c 0.10 0.13 0.16 0.004 0.005 0.006 d 6.35 6.48 6.61 0.250 0.255 0.260 e 6.35 6.48 6.61 0.250 0.255 0.260 e2 4.32 4.45 4.58 0.170 0.175 0.180 e3 0.88 1.01 1.14 0.035 0.040 0.045 e 1.27 0.050 l 6.51 7.38 0.256 0.291 q 0.66 0.79 0.92 0.026 0.031 0.092 s1 0.92 1.12 1.32 0.036 0.044 0.052 n08 08
rhf43b ordering information doc id 13477 rev 9 15/17 5 ordering information note: contact your st sales office for information regarding the specific conditions for products in die form and qml-q versions. table 8. order codes order code description temp. range package marking packing rhf43bk1 engineering model -55 c to 125 c flat-8 rhf43bk1 conductive strip pack RHF43BK-01V qml-v model 5962f06237 01vxc
revision history rhf43b 16/17 doc id 13477 rev 9 6 revision history table 9. document revision history date revision changes 21-may-2007 1 first public release. 10-dec-2007 2 changed name of pins on pinout diagram on cover page. modified supply current values over temperature range in electrical characteristics. power dissipation removed from amr table. 29-jan-2008 3 added elrs-free rad-hard design in description on cover page. modified description of heavy ion latch-up (sel) immunity parameter in table 2 on page 3 . 11-may-2009 4 updated radiation immunity in features on page 1 and in table 2 on page 3 . updated smb reference in features on page 1 . 15-oct-2009 5 updated test conditions for avd vs. vicm in table 4 on page 4 and table 5 on page 6 . updated input current and voltage noise in ta b l e 4 . updated order codes in table 8 on page 15 . 30-mar-2010 6 added figure 4 and figure 5 . added information for ambient temperature in ta bl e 4 and ta b l e 5 . added chapter 3 . 20-aug-2010 7 corrected "l" dimension in ta bl e 7 . 27-jul-2011 8 added note: on page 14 and in the "pin connections" diagram on the coverpage. 08-nov-2012 9 features : added silhouette added table 1: device summary ta bl e 2 : removed 9 from ?supply voltage?; updated footnote 1. added figure 6 and figure 15 figure 17 through to figure 22 : modified titles table 8: order codes : updated table and removed order code RHF43BK-01V.
rhf43b doc id 13477 rev 9 17/17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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